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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PLVA2600A series Low-voltage avalanche regulator double diodes
Product specification Supersedes data of 1996 May 06 1999 May 10
Philips Semiconductors
Product specification
Low-voltage avalanche regulator double diodes
FEATURES * Very low dynamic impedance at low currents: approximately 120 of conventional series * Hard breakdown knee * Low noise: approximately 110 of conventional series * Total power dissipation: max. 250 mW * Small tolerances of VZ * Working voltage range: nom. 5.0 to 6.8 V * Non-repetitive peak reverse power dissipation: max. 30 W. APPLICATIONS * Low current, low power, low noise applications * CMOS RAM back-up circuits * Voltage stabilizers * Voltage limiters * Smoke detector relays. DESCRIPTION The PLVA2600A series consists of two high performance voltage regulator diodes with common anodes, in small SOT23 plastic SMD packages. The series consists of PLVA2650A to PLVA2668A.
Top view
PLVA2600A series
MARKING TYPE NUMBER PLVA2650A PLVA2653A PLVA2656A PLVA2659A PLVA2662A PLVA2665A PLVA2668A Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. PINNING PIN 1 2 3 cathode (k1) cathode (k2) common anode DESCRIPTION MARKING CODE(1) 9J 9K 9L 9M 9N 9O 9P
2
1
2 3 3
MAM245
1
Fig.1 Simplified outline (SOT23) and symbol.
1999 May 10
2
Philips Semiconductors
Product specification
Low-voltage avalanche regulator double diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZRM PZSM Ptot PARAMETER continuous forward current repetitive peak working current non-repetitive peak reverse power dissipation total power dissipation tp = 100 s; = 10% tp = 100 s; Tj = 150 C single diode loaded; Tamb = 25 C; note 1 double diode loaded; Tamb = 25 C; note 1 Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board. storage temperature junction temperature CONDITIONS
PLVA2600A series
MIN. - - - - - -65 -
MAX. 250 250 30 250 180 +150 150
UNIT mA mA W mW mW C C
1999 May 10
3
Philips Semiconductors
Product specification
Low-voltage avalanche regulator double diodes
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF VZ PARAMETER forward voltage working voltage PLVA2650A PLVA2653A PLVA2656A PLVA2659A PLVA2662A PLVA2665A PLVA2668A working voltage PLVA2650A PLVA2653A PLVA2656A PLVA2659A PLVA2662A PLVA2665A PLVA2668A RZ dynamic resistance PLVA2650A PLVA2653A PLVA2656A to PLVA2668A SZ temperature coefficient PLVA2650A PLVA2653A PLVA2656A PLVA2659A PLVA2662A PLVA2665A PLVA2668A IR reverse current PLVA2650A PLVA2653A PLVA2656A PLVA2659A PLVA2662A PLVA2665A PLVA2668A VR = 80%; VZ nominal - - - - - - - IZ = 250 A - - - - - - - 1 kHz superimposed; IZAC is 10% of IZDC; IZ = 250 A IZ = 10 A - - - - - - - - - - CONDITIONS IF = 10 mA IZ = 250 A 4.80 5.10 5.40 5.70 6.00 6.30 6.60 -
PLVA2600A series
MIN. -
TYP.
MAX. 0.9 5.20 5.50 5.80 6.10 6.40 6.70 7.00 - - - - - - - 700 250 100 - - - - - - - 20000 5000 1000 500 100 50 10
UNIT V V V V V V V V V V V V V V V mV/K mV/K mV/K mV/K mV/K mV/K mV/K nA nA nA nA nA nA nA
5.00 5.30 5.60 5.90 6.20 6.50 6.80 4.30 5.20 5.51 5.85 6.19 6.49 6.80 - - - 0.20 1.60 1.90 2.40 2.65 2.90 3.40 - - - - - - -
1999 May 10
4
Philips Semiconductors
Product specification
Low-voltage avalanche regulator double diodes
SYMBOL IR PARAMETER reverse current PLVA2650A PLVA2653A PLVA2656A PLVA2659A PLVA2662A PLVA2665A PLVA2668A reverse current PLVA2650A PLVA2653A PLVA2656A PLVA2659A PLVA2662A PLVA2665A PLVA2668A VZ line regulation PLVA2659A to PLVA2668A ILO = 10 A; IHi = 1 mA PLVA2656A PLVA2650A PLVA2653A Vn noise voltage density ILO = 50 A; IHi = 1 mA ILO = 100 A; IHi = 1 mA ILO = 100 A; IHi = 1 mA f = 1 kHz; B = 1 kHz; IZ = 250 A - - - - - VR = 90%; VZ nominal - - - - - - - CONDITIONS VR = 50%; VZ nominal - - - - - - -
PLVA2600A series
MIN.
TYP. 34 22 1.1 0.9 0.9 0.9 0.8 21 3.5 1.3 1.0 0.05 0.04 0.006 - - - - -
MAX. - - - - - - - - - - - - - - 0.1 0.1 0.4 0.2 1.0
UNIT nA nA nA nA nA nA nA A A A A A A A V V V V V ----------Hz
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed circuit-board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W
1999 May 10
5
Philips Semiconductors
Product specification
Low-voltage avalanche regulator double diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
PLVA2600A series
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 May 10
6
Philips Semiconductors
Product specification
Low-voltage avalanche regulator double diodes
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
PLVA2600A series
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 May 10
7
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 May 10
Document order number:
9397 750 05919

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